What are the advantages and disadvantages between aluminum nitride and silicon nitride ceramics?

1. Different thermal conductivity, aluminum nitride ceramic substrate has higher thermal conductivity

The thermal conductivity of silicon nitride ceramic substrate is generally 75-80W/(m·K), and the thermal conductivity of aluminum nitride ceramic substrate can be up to 170W/(m·K). It can be seen that aluminum nitride ceramic substrate has higher thermal conductivity.

2. Different mechanical strength, silicon nitride ceramic has higher strength than aluminum nitride ceramic

In terms of mechanical strength, aluminum nitride ceramic substrate is easier to break than silicon nitride ceramic substrate. The mechanical bending strength of aluminum nitride ceramic substrate reaches 450mpa, and the bending strength of silicon nitride ceramic substrate is 800mpa. It can be seen that high-strength and high-thermal conductivity silicon nitride ceramic substrate has better bending strength, which can improve the strength and impact resistance of silicon nitride ceramic copper clad board, weld thicker oxygen-free copper without ceramic cracking, and improve the reliability of the substrate.

3. Different application range, silicon nitride ceramic substrate is the substrate material for reliability module packaging.

Aluminum nitride ceramic substrates and silicon nitride ceramic substrates are widely used in the fields of LED, semiconductors and high-power optoelectronics, and are used in fields with relatively high requirements for thermal conductivity. Silicon nitride ceramic substrates have the characteristics of high strength, high thermal conductivity and high reliability. Circuits can be made on the surface by wet etching process. After surface plating, a substrate material for high-reliability electronic substrate module packaging is obtained. It is the preferred substrate material for 1681 power control modules for new electric vehicles. In addition, the ceramic substrate industry also involves technologies in many fields such as LED, fine ceramic preparation, thin film metallization, yellow light lithography, laser forming, electrochemical plating, optical simulation, microelectronic welding, etc. The products are widely used in high-power optoelectronic and semiconductor device fields such as power transmitters, photovoltaic devices, IGBT modules, power thyristors, resonator bases, semiconductor packaging substrates, etc.