Working principle of silicon nitride substrate

The working principle of silicon nitride substrate is mainly based on its unique physical and chemical properties, which enable it to play a key role in a variety of high-tech fields.

Silicon nitride (Si3N4) is an inorganic substance with high thermal conductivity, high mechanical strength, good chemical stability and thermal shock resistance. These characteristics make silicon nitride substrates widely used in power electronic devices, high-temperature engineering parts, advanced refractory materials in the metallurgical industry, and the chemical industry.

In power electronic devices, the working principle of silicon nitride substrates is mainly reflected in its heat dissipation and mechanical support. Since semiconductor devices generate a lot of heat during operation, and silicon nitride substrates have excellent high thermal conductivity, they can effectively export heat from the device to ensure the normal operation of the device. At the same time, the high mechanical strength of silicon nitride substrates also enables it to withstand large mechanical stress and provide stable support for the device.

In addition, silicon nitride substrates also have good chemical stability and thermal shock resistance, and can maintain stable performance in harsh working environments. These characteristics enable silicon nitride substrates to work normally under extreme conditions such as high temperature, high pressure, and strong corrosion, further broadening their application areas.

In summary, the working principle of silicon nitride substrates is mainly based on their high thermal conductivity, high mechanical strength, good chemical stability, and thermal shock resistance, which make them play an irreplaceable role in a variety of high-tech fields.